Toshiba Corporation today announced that it has realized the
world´s fastest circuit technology for embedded DRAM for System LSI,
achieving a speed of 833MHz at 32Mb density. The technology will be
applied to graphic processing LSI. The technology was today introduced
at the ISSCC (International Solid State Circuits Conference), held at
San Francisco CA from February 3rd.
Embedded DRAM are applied to systems on chips for graphic
application, as they can read larger data amounts at higher speeds
than external memory. As video images achieve higher levels of
definition, higher processing speeds of larger densities are required.
To realize high speed operation, Toshiba applied a "pseudo two
port system," a technology that virtually divides the overall memory
into two and then reads and writes data in parallel and alternately.
By replacing conventional serial read and write system with the new
parallel technology, and optimizing such circuits as the command
structure, Toshiba achieved the world´s highest level of embedded DRAM
performance ad 32Mb, a density actually applicable to products.
System LSI with embedded DRAM memory will find application in next
generation high-end digital consumer products, game applications,
mobile phones, projectors and other image-related applications that
require high speed transfer of large volumes of data. Toshiba plans to
apply this technology to its leading edge 65nm system LSI process, and
to meet market demand for advanced graphic applications through the
early launch of SoC integrating the new embedded DRAM.
For further information with images, please visit Toshiba´s web
site at www.toshiba.co.jp/index.htm
