Rambus Inc. (Nasdaq:RMBS), one of the world's premier technology
licensing companies specializing in high-speed memory architectures,
today announced the introduction of its memory controller interface
solution for industry-standard DDR3 DRAM. The fully integrated hard
macro cell provides the physical layer (PHY) interface between the
controller logic and DDR3 or DDR2 DRAM devices for data rates of up to
1600 MHz.
Optimized for low power and reduced silicon area, the Rambus DDR3
memory controller interface cell is designed to accommodate a broad
range of applications including PC main memory, consumer electronics,
servers, workstations, and network communications. To serve these
applications, Rambus has architected and developed a DDR3 memory
controller interface macro-cell that engineers can seamlessly
integrate into their customer owned tooling (COT) or
application-specific integrated circuit (ASIC) chip.
"As signaling frequencies of mainstream DDR DRAMs continue to
increase, the memory interfaces critical to system performance have
become very challenging to design," said Martin Scott, senior vice
president of engineering at Rambus Inc. "Using our extensive signal
integrity experience, we have architected a low-risk, highly optimized
DDR3 memory controller interface that meets the performance
requirements of both main memory and consumer applications."
To ensure first-silicon success, a reliable system environment for
high-volume production, and rapid in-system qualification, the Rambus
DDR3 interface solution incorporates Rambus innovations such as:
-- FlexPhase(TM) timing adjustment circuits for precise on-chip
data alignment with the clock
-- Calibrated output drivers
-- On-die termination
-- LabStation(TM) software environment for bring-up,
characterization and validation of the DDR3 interface in the
end-user application
Other key interface features include:
-- 800 to 1600 MHz data rates
-- Support for DDR3 and DDR2 signaling modes
-- On-chip phase-locked loop (PLL)
-- On-chip delay-locked loop (DLL)
-- Levelization support for fly-by command and address
architecture
-- Rambus FlexPhase(TM) based in-PHY module that provides
characterization and testing capability in the production
system
-- Multi-drop bus and multi-rank module support for large
capacity systems
-- Variable data bit-widths (8-, 16-, 32-, and 64-bit) with
optional ECC support
Rambus DDR cells are supported by comprehensive system design and
integration services that include a complete set of design models and
integration tools, including GDSII database, timing models, layout
verification netlists, gate-level models, place-and-route outline, and
placement guidelines. Package design and system board layout services
are also available. For more information about the Rambus DDR3 memory
controller interface please visit www.rambus.com/ddr.
About Rambus Inc.
Rambus is one of the world's premier technology licensing
companies specializing in the invention and design of high-speed
memory architectures. Since its founding in 1990, the Company's
patented innovations, breakthrough technologies and renowned
integration expertise have helped industry-leading chip and system
companies bring superior products to market. Rambus' technology and
products solve customers' most complex chip and system-level interface
challenges enabling unprecedented performance in computing,
communications and consumer electronics applications. Rambus licenses
both its world-class patent portfolio as well as its family of
leadership and industry-standard interface products. Headquartered in
Los Altos, California, Rambus has regional offices in North Carolina,
India, Germany, Japan, Korea and Taiwan. Additional information is
available at www.rambus.com.
Rambus and the Rambus logo are registered trademarks of Rambus
Inc. FlexPhase and LabStation are trademarks of Rambus Inc. All other
trade names are the service marks, trademarks, or registered
trademarks of their respective owners.
