AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45nm Chips

At the International Electron Device Meeting (IEDM) today, IBM
(NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of
immersion lithography, ultra-low-K interconnect dielectrics, and
multiple enhanced transistor strain techniques for application to the
45nm microprocessor process generation. AMD and IBM expect the first
45nm products using immersion lithography and ultra-low-K interconnect
dielectrics to be available in mid-2008.

"As the first microprocessor manufacturers to announce the use of
immersion lithography and ultra-low-K interconnect dielectrics for the
45nm technology generation, AMD and IBM continue to blaze a trail of
innovation in microprocessor process technology," said Nick Kepler,
vice president of logic technology development at AMD. "Immersion
lithography will allow us to deliver enhanced microprocessor design
definition and manufacturing consistency, further increasing our
ability to deliver industry-leading, highly sophisticated products to
our customers. Ultra-low-K interconnect dielectrics will further
extend our industry-leading microprocessor performance-per-watt ratio
for the benefit of all of our customers. This announcement is another
proof of IBM and AMD's successful research and development
collaboration."

Current process technology uses conventional lithography, which
has significant limitations in defining microprocessor designs beyond
the 65nm process technology generation. Immersion lithography uses a
transparent liquid to fill the space between the projection lens of
the step-and-repeat lithography system and the wafer that contains
hundreds of microprocessors. This significant advance in lithography
provides increased depth of focus and improved image fidelity that can
improve chip-level performance and manufacturing efficiency. This
immersion technique will give AMD and IBM manufacturing advantages
over competitors that are not able to develop a production-class
immersion lithography process for the introduction of 45nm
microprocessors. For example, the performance of an SRAM cell shows
improvements of approximately 15 per cent due to this enhanced process
capability, without resorting to more costly double-exposure
techniques.

In addition, the use of porous, ultra-low-K dielectrics to reduce
interconnect capacitance and wiring delay is a critical step in
further improving microprocessor performance as well as lowering power
dissipation. This advance is enabled through the development of an
industry-leading ultra-low-K process integration that reduces the
dielectric constant of the interconnect dielectric while maintaining
the mechanical strength. The addition of ultra-low-K interconnect
provides a 15 per cent reduction in wiring-related delay as compared
to conventional low-K dielectrics.

"The introduction of immersion lithography and ultra-low-K
interconnect dielectrics at 45nm is an early example of the successful
transfer of technology from our ground-breaking research work at the
Albany Nanotech Center to IBM's state-of-the-art 300mm manufacturing
and development line at East Fishkill, New York, as well as AMD's
state-of-the-art 300mm manufacturing line in Dresden, Germany," said
Gary Patton, vice president, technology development at IBM's
Semiconductor Research and Development Center. "The successful
integration of leadership technologies with AMD and our partners
demonstrates the strength of our collaborative innovation model."

The continued enhancement of AMD and IBM's transistor strain
techniques has enabled the continued scaling of transistor performance
while overcoming industry-wide, geometry-related scaling issues
associated with migrating to 45nm process technologies. In spite of
the increased packing density of the 45nm generation transistors, IBM
and AMD have demonstrated an 80 per cent increase in p-channel
transistor drive current and a 24 per cent increase in n-channel
transistor drive current compared to unstrained transistors. This
achievement results in the highest CMOS performance reported to date
in a 45nm process technology.

IBM and AMD have been collaborating on the development of
next-generation semiconductor manufacturing technologies since January
2003. In November 2005, the two companies announced an extension of
their joint development efforts until 2011 covering 32nm and 22nm
process technology generations.

About AMD

Advanced Micro Devices (NYSE: AMD) is a leading global provider of
innovative microprocessor solutions for computing, communications and
consumer electronics markets. Founded in 1969, AMD is dedicated to
delivering superior computing solutions based on customer needs that
empower users worldwide. For more information visit www.amd.com.

About IBM

IBM semiconductor technologies are a major contributor to the
company's position as the world's largest information technology
company. Its chip products and solutions power IBM eServer and
TotalStorage systems as well as many of the world's best-known
electronics brands. IBM semiconductor innovations include dual-core
microprocessors, copper wiring, silicon-on-insulator and silicon
germanium transistors, strained silicon, and eFUSE, a technology that
enables computer chips to automatically respond to changing
conditions. More information is available at:
http://www.ibm.com/chips.

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